With the rapid development of industrial processing, national defense, biomedical applications, communications, and scientific research, high-power semiconductor lasers (including LD, TDL, and VCSEL) have become key enabling technologies. However, as laser power continues to increase, thermal management has emerged as a critical bottleneck, limiting further improvements in performance, reliability, and power density.
During high-power operation, a significant portion of electrical energy is converted into heat within the gain medium. If this heat cannot be efficiently removed, it leads to wavelength drift, degradation of beam quality, accelerated material aging, and even catastrophic device failure. Therefore, the selection of an appropriate heat sink material plays a decisive role in determining the long-term stability and performance limits of laser systems.
Among various candidate materials, silicon carbide (SiC) heat sinks have gradually gained recognition as a next-generation solution due to their excellent thermal matching, environmental durability, and engineering compatibility.
Currently mainstream heat sink materials include metals (copper and aluminum), aluminum nitride (AlN) ceramics, and CVD diamond. However, each exhibits significant limitations in high-power laser applications:
Copper (Cu)
Thermal conductivity: ~397 W·m⁻¹·K⁻¹
Coefficient of thermal expansion (CTE): 16.5×10⁻⁶ K⁻¹
Issue: Severe mismatch with GaN and InP gain media, leading to thermal stress concentration and interface degradation during thermal cycling.
Aluminum (Al)
Thermal conductivity: ~217 W·m⁻¹·K⁻¹
CTE: 23.1×10⁻⁶ K⁻¹
Mechanical weakness (Brinell hardness ~20–35 HB), making it prone to deformation during assembly and operation.
Thermal conductivity: ~180 W·m⁻¹·K⁻¹
CTE: ~4.5×10⁻⁶ K⁻¹ (close to SiC)
Limitation: Thermal conductivity is only ~45% of 4H-SiC, which restricts its effectiveness in kilowatt-class laser systems.
Thermal conductivity: up to 2000 W·m⁻¹·K⁻¹
CTE: 1.0×10⁻⁶ K⁻¹, severely mismatched with common laser materials such as Yb:YAG (6.8×10⁻⁶ K⁻¹)
Challenges: Extremely high cost and difficulty in producing defect-free wafers larger than 3 inches.
Compared with the above materials, silicon carbide (SiC) demonstrates a superior balance between thermal performance, mechanical reliability, and material compatibility.
Room-temperature thermal conductivity: 360–490 W·m⁻¹·K⁻¹, comparable to copper and far superior to aluminum.
CTE: 3.8–4.3×10⁻⁶ K⁻¹, closely matching GaN (3.17×10⁻⁶ K⁻¹) and InP (4.6×10⁻⁶ K⁻¹).
Result: Reduced thermal stress, improved interface stability, and enhanced reliability under thermal cycling.
SiC offers:
Excellent oxidation resistance
Strong radiation tolerance
Mohs hardness up to 9.2
Stability in high-temperature and high-power laser environments
Compared to metals, SiC does not corrode like copper or deform like aluminum, ensuring consistent thermal performance over long service lifetimes.
SiC can be integrated with semiconductor gain media using various bonding techniques, including:
Metallization bonding
Direct bonding
Eutectic bonding
This versatility enables low thermal interface resistance and seamless integration with existing semiconductor manufacturing processes.
SiC exists in multiple polytypes, including 3C-SiC, 4H-SiC, and 6H-SiC, each with distinct properties and fabrication methods:
Growth temperature: > 2000°C
Produces 4H-SiC and 6H-SiC
Thermal conductivity: 300–490 W·m⁻¹·K⁻¹
Suitable for structurally demanding high-power laser systems.
Growth temperature: 1450–1700°C
Enables precise control of polytype selection
Thermal conductivity: 320–450 W·m⁻¹·K⁻¹
Ideal for high-end, long-lifetime laser devices.
Produces high-purity 4H-SiC and 6H-SiC
Thermal conductivity: 350–500 W·m⁻¹·K⁻¹
Combines high thermal performance with excellent dimensional stability, making it a preferred choice for industrial applications.
Silicon carbide (SiC) has emerged as a leading heat sink material for high-power laser systems due to:
Superior thermal matching with semiconductor gain media
Exceptional environmental durability under extreme conditions
Strong compatibility with semiconductor bonding processes
By leveraging different SiC polytypes and crystallographic orientations, engineers can further optimize thermal expansion matching and heat dissipation efficiency in heterogeneously bonded laser devices.
As laser power levels continue to rise, SiC heat sinks are poised to play an increasingly critical role in next-generation photonics and optoelectronic systems.
With the rapid development of industrial processing, national defense, biomedical applications, communications, and scientific research, high-power semiconductor lasers (including LD, TDL, and VCSEL) have become key enabling technologies. However, as laser power continues to increase, thermal management has emerged as a critical bottleneck, limiting further improvements in performance, reliability, and power density.
During high-power operation, a significant portion of electrical energy is converted into heat within the gain medium. If this heat cannot be efficiently removed, it leads to wavelength drift, degradation of beam quality, accelerated material aging, and even catastrophic device failure. Therefore, the selection of an appropriate heat sink material plays a decisive role in determining the long-term stability and performance limits of laser systems.
Among various candidate materials, silicon carbide (SiC) heat sinks have gradually gained recognition as a next-generation solution due to their excellent thermal matching, environmental durability, and engineering compatibility.
Currently mainstream heat sink materials include metals (copper and aluminum), aluminum nitride (AlN) ceramics, and CVD diamond. However, each exhibits significant limitations in high-power laser applications:
Copper (Cu)
Thermal conductivity: ~397 W·m⁻¹·K⁻¹
Coefficient of thermal expansion (CTE): 16.5×10⁻⁶ K⁻¹
Issue: Severe mismatch with GaN and InP gain media, leading to thermal stress concentration and interface degradation during thermal cycling.
Aluminum (Al)
Thermal conductivity: ~217 W·m⁻¹·K⁻¹
CTE: 23.1×10⁻⁶ K⁻¹
Mechanical weakness (Brinell hardness ~20–35 HB), making it prone to deformation during assembly and operation.
Thermal conductivity: ~180 W·m⁻¹·K⁻¹
CTE: ~4.5×10⁻⁶ K⁻¹ (close to SiC)
Limitation: Thermal conductivity is only ~45% of 4H-SiC, which restricts its effectiveness in kilowatt-class laser systems.
Thermal conductivity: up to 2000 W·m⁻¹·K⁻¹
CTE: 1.0×10⁻⁶ K⁻¹, severely mismatched with common laser materials such as Yb:YAG (6.8×10⁻⁶ K⁻¹)
Challenges: Extremely high cost and difficulty in producing defect-free wafers larger than 3 inches.
Compared with the above materials, silicon carbide (SiC) demonstrates a superior balance between thermal performance, mechanical reliability, and material compatibility.
Room-temperature thermal conductivity: 360–490 W·m⁻¹·K⁻¹, comparable to copper and far superior to aluminum.
CTE: 3.8–4.3×10⁻⁶ K⁻¹, closely matching GaN (3.17×10⁻⁶ K⁻¹) and InP (4.6×10⁻⁶ K⁻¹).
Result: Reduced thermal stress, improved interface stability, and enhanced reliability under thermal cycling.
SiC offers:
Excellent oxidation resistance
Strong radiation tolerance
Mohs hardness up to 9.2
Stability in high-temperature and high-power laser environments
Compared to metals, SiC does not corrode like copper or deform like aluminum, ensuring consistent thermal performance over long service lifetimes.
SiC can be integrated with semiconductor gain media using various bonding techniques, including:
Metallization bonding
Direct bonding
Eutectic bonding
This versatility enables low thermal interface resistance and seamless integration with existing semiconductor manufacturing processes.
SiC exists in multiple polytypes, including 3C-SiC, 4H-SiC, and 6H-SiC, each with distinct properties and fabrication methods:
Growth temperature: > 2000°C
Produces 4H-SiC and 6H-SiC
Thermal conductivity: 300–490 W·m⁻¹·K⁻¹
Suitable for structurally demanding high-power laser systems.
Growth temperature: 1450–1700°C
Enables precise control of polytype selection
Thermal conductivity: 320–450 W·m⁻¹·K⁻¹
Ideal for high-end, long-lifetime laser devices.
Produces high-purity 4H-SiC and 6H-SiC
Thermal conductivity: 350–500 W·m⁻¹·K⁻¹
Combines high thermal performance with excellent dimensional stability, making it a preferred choice for industrial applications.
Silicon carbide (SiC) has emerged as a leading heat sink material for high-power laser systems due to:
Superior thermal matching with semiconductor gain media
Exceptional environmental durability under extreme conditions
Strong compatibility with semiconductor bonding processes
By leveraging different SiC polytypes and crystallographic orientations, engineers can further optimize thermal expansion matching and heat dissipation efficiency in heterogeneously bonded laser devices.
As laser power levels continue to rise, SiC heat sinks are poised to play an increasingly critical role in next-generation photonics and optoelectronic systems.
