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Created with Pixso. ​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

ブランド名: ZMSH
モデル番号: 結合固有のSIC真空チャック
MOQ: 5
価格: by case
配達時間: 2〜4週間
支払条件: T/T
詳細情報
起源の場所:
中国
証明:
rohs
素材の純度:
sic≥99.999%
熱膨張係数:
〜4.5×10⁻⁶/℃
弾性率:
> 400 GPA
表面の平坦性:
≤1 μm
表面粗さ(RA):
≤0.01μm
吸着溝の精度:
±5μm
パッケージの詳細:
100グレードのクリーニングルームのパッケージ
製品の説明

​​Bonding-Specific SiC Vacuum Chuck​ Brief

 

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

 

 

 

​​​​A Bonding-Specific Silicon Carbide (SiC) Vacuum Chuck is a high-performance ceramic adsorption component manufactured using ​​reaction sintering or chemical vapor deposition (CVD) processes​​, specifically designed for ​​semiconductor chip bonding processes​​. Its core function is to ​​stably adsorb and secure wafers​​ during bonding via ​​vacuum negative pressure or electrostatic adsorption principles​​, ensuring ​​micrometer or even sub-micrometer-level precise alignment and interconnection​​ between chips and substrates or interposers under high-temperature and pressurized conditions. It employs ​​ultra-high-purity silicon carbide ceramic​​ as the base material, utilizing ​​precisely engineered porous structures or surface electrode designs​​ to provide uniform adsorption force during bonding, preventing wafer slippage or deformation.

 

 


 

Key Performance Parameters

 
 
​​Parameter Category​​ ​​Parameter Name​​ ​​Typical Value/Range​​
​​Material Characteristics​​ Material Purity SiC ≥ 99.999%
Coefficient of Thermal Expansion ~4.5×10⁻⁶/℃
Thermal Conductivity ~120 W/(m·K) (room temperature)
Elastic Modulus >400 GPa
Bulk Density ≥3.1 g/cm³
​​Functional Characteristics​​ Surface Flatness ≤1 μm
Surface Roughness (Ra) ≤0.01 μm
Adsorption Groove Accuracy ±5 μm
Operating Temperature Room temperature~400°C (electrostatic type)
 

 


 

​​Bonding-Specific SiC Vacuum Chuck Features

 
 
  1. ​​Precision Air Channel Machining​​
  2. ​​Mirror Polishing​​ (or ​​Mirror Finish​​)
  3. ​​Ultra-Low Coefficient of Thermal Expansion​​ (Ultra-Low CTE)
  4. ​​High Stiffness​​
  5. ​​High Compactness​​
  6. ​​Surface Flatness and Parallelness up to 1 Micrometer​​ (Surface Flatness & Parallelism ≤1 μm)

 

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 0​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 1

 

 


 

Bonding-Specific SiC Vacuum Chuck Applications

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 2

Bonding-specific SiC vacuum chucks are primarily used in the following high-end manufacturing scenarios:

 

  • ​​Semiconductor Advanced Packaging​​: Used in ​​chip-to-wafer (C2W) or wafer-to-wafer (W2W) bonding​​ (e.g., Cu-Cu thermocompression bonding, hybrid bonding), supporting high-precision stacking in 3D IC and SiP packaging.
  • ​​MEMS Sensor Packaging​​: Provides high-temperature (≤400°C) adsorption and insulation support in ​​vacuum bonding or anodic bonding​​ for microelectromechanical systems, avoiding damage to sensitive structures.
  • ​​Power Device Interconnection​​: Used in ​​silver sintering or transient liquid phase (TLP) bonding​​ for SiC or GaN power modules, withstanding high temperatures while maintaining thermo-mechanical stability.
  • ​​Photonic Integration and Display Driving​​: Supports ​​Micro-LED mass transfer​​ or glass-silicon interposer bonding, achieving micrometer-level pick-and-place accuracy (±1μm).

 

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 3

 

 


 

Recommendation for Customized SiC Ceramics Components

 

 

1. SiC Ceramic Vacuum Chuck ​​Flip-Chip Bonding Mirror Polishing High-Stiffness​​

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 4

 

 

 

2. Customized SiC Ceramic Guide Rail Zero-Wear Corrosion-Resistant High-Speed​​

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 5

 

 


 

Bonding-Specific SiC Vacuum Chuck FAQ

 

 

Q1: Why choose a silicon carbide (SiC) vacuum chuck for bonding processes?​​

​​A1:​​ SiC vacuum chucks are chosen for their ​​exceptional thermal stability, ultra-low thermal expansion, and high stiffness​​, which ensure ​​micron-level alignment accuracy​​ and ​​prevent wafer deformation​​ during high-temperature bonding.

 

 

​​Q2: What are the primary applications of SiC vacuum chucks in semiconductor manufacturing?​​

​​A2:​​ They are primarily used in ​​advanced semiconductor packaging​​ processes such as ​​chip-to-wafer (C2W) and wafer-to-wafer (W2W) bonding​​, ​​MEMS sensor encapsulation​​, and ​​power device interconnection​​ (e.g., SiC/GaN module sintering), where ​​high temperature, precision alignment, and contamination control​​ are critical.

 

 


Tags: #Bonding-Specific SiC Vacuum Chuck, #Customized, #Wafer Adsorption, #Surface Flatness ≤1μm​​

   
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