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| ブランド名: | ZMSH |
| MOQ: | 10 |
| 配達時間: | 2〜4週間 |
| 支払条件: | T/T |
4-inch C-Plane SSP Sapphire Substrate Al₂O₃ for LED & Optical Applications
Overview
Our 4-inch C-plane SSP (Single Side Polished) sapphire substrates are high-purity, monocrystalline Al₂O₃ wafers designed for advanced semiconductor, optoelectronic, and optical applications. With exceptional mechanical strength, thermal stability, and optical transparency, these wafers are ideal for epitaxial growth of GaN, AlN, and other III-V or II-VI compounds used in LEDs, laser diodes, and high-precision optical components.
Key Features
High-purity single-crystal sapphire (Al₂O₃)
C-plane orientation (0001) with tight ±0.3° tolerance
Single side polished (SSP) surface, front Ra < 0.2 nm
Excellent flatness and low bow (<15 µm)
High thermal and chemical stability for harsh environments
Customizable axis, diameter, and thickness available
Specifications
| Parameter | Specification |
|---|---|
| Diameter | 100 mm ± 0.3 mm (4 inch) |
| Orientation | C-plane (0001), ±0.3° |
| Thickness | 650 µm ± 15 µm |
| Bow | <15 µm |
| Front Surface | Single Side Polished (Ra < 0.2 nm) |
| Back Surface | Fine Ground (Ra 0.8–1.2 µm) |
| TTV (Total Thickness Variation) | ≤ 20 µm |
| LTV (Local Thickness Variation) | ≤ 20 µm |
| Warp | ≤ 20 µm |
| Material | >99.99% high-purity Al₂O₃ |
Mechanical & Thermal Properties
Mohs hardness: 9 (second only to diamond)
Thermal conductivity: 25 W/m·K
Melting point: 2045°C
Low thermal expansion ensures dimensional stability
Optical & Electronic Properties
Optical transparency: 190 nm – 5500 nm
Refractive index: ~1.76
Intrinsic resistivity: 1E16 Ω·cm
Excellent insulator with low dielectric loss
Applications
Substrate for GaN, AlN, and III-V or II-VI epitaxial growth
Blue, green, and white LED production
Laser diode (LD) substrates
Infrared (IR) optical components and windows
High-precision optics and microelectronics
SOS (Silicon-on-Sapphire) and RFIC devices
Why Choose C-Plane Sapphire?
C-plane sapphire exhibits high anisotropy, excellent scratch resistance, and low dielectric loss, making it ideal for semiconductor, optical, and microelectronic applications. Its crystalline structure allows high-quality epitaxial growth with minimal lattice mismatch for GaN-based LEDs and other thin-film devices.
Packaging & Shipping
Standard cleanroom packaging (Class 100), single wafer or cassette box
Vacuum-sealed for contamination-free delivery
Custom packaging available upon request
FAQ
Q: What is the difference between SSP and DSP sapphire wafers?
A: SSP is single side polished, suitable for epitaxial growth on the polished side; DSP is double side polished, providing ultra-flat surfaces on both sides for high-end optical applications.
Q: Can the wafer be customized?
A: Yes, we accept custom diameters, thicknesses, and axis orientation according to client specifications.
Q: What are common applications for 4-inch C-plane sapphire wafers?
A: They are widely used for GaN LED substrates, laser diode substrates, IR windows, SOS devices, and other high-precision optoelectronic or semiconductor applications.
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