Wide-band gap silicon carbide semiconductors for high-power electrical equipment control.
Higher operating temperatures and breakdown voltages compared to traditional silicon devices.
Faster switching speeds and lower on-off resistance for improved efficiency.
Three times the thermal conductivity of silicon for better heat dissipation.
高出力密度は、システムサイズと重量を削減します。
Extremely low switching losses enhance system performance.
Available in 3'' and 4'' diameters with 350um and 500um thickness options.
Suitable for industrial, transportation, automotive, medical, aerospace, and defense applications.
よくある質問:
What is the minimum order quantity (MOQ) for these SIC epitaxial substrates?
For inventory items, the MOQ is 1 piece. For customized products, the MOQ is 5 pieces or more.
What shipping methods do you offer and how is the cost determined?
We accept DHL, FedEx, EMS, and other carriers. If you have your own express account, we can use it; otherwise, we can assist with shipping. Freight costs are settled based on actual charges.
What is the delivery time for these substrates?
For inventory items, delivery takes 5 workdays after order placement. For customized products, delivery takes 2-3 weeks after order confirmation.
Can I customize the SIC epitaxial substrates based on my specific requirements?
Yes, we can customize the material, specifications, and optical coating for your components based on your needs.